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RT Book, Whole SR Print DC OPAC T1 Hot carrier design considerations for MOS devices and circuits / edited by Cheng T. Wang A1 Wang, Cheng T. YR 1992 FD c1992 SP xiii, 334 p. K1 Metal oxide semiconductors -- Design and construction K1 Metal oxide semiconductors -- Reliability PB Van Nostrand Reinhold PP New York SN 0442001215 LA English (英語) CL LCC:TK7871.99.M44 CL DC20:621.3815/2 NO Includes bibliographical references and index NO 書誌ID=B000065166; NCID=BA19241990; LK [OPAC]https://lib.pu-toyama.ac.jp/opac/opac_link/bibid/B000065166 OL 30