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Multigate Transistors for High Frequency Applications / by K. Sivasankaran, Partha Sharathi Mallick
(Springer Tracts in Electrical and Electronics Engineering. ISSN:27314219)

データ種別 電子ブック
1st ed. 2023.
出版者 (Singapore : Springer Nature Singapore : Imprint: Springer)
出版年 2023
大きさ XI, 91 p. 74 illus., 36 illus. in color : online resource
著者標目 *Sivasankaran, K author
Mallick, Partha Sharathi author
SpringerLink (Online service)

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射水-電子 007 EB0002592 Computer Scinece R0 2005-6,2022-3

9789819901579

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一般注記 1. Introduction -- 2. Rf Transistor and Design Challenges -- 3. Radio Frequency Stability Performance of Dg Mosfet -- 4. Radio Frequency Stability Performance of Dg Tunnel Fet -- 5. Radio Frequency Stability Performance of Finfet -- 6. Radio Frequency Stability Performance Of Silicon Nanowire Transistor -- 7. References
This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry
HTTP:URL=https://doi.org/10.1007/978-981-99-0157-9
件 名 LCSH:Computer networks 
LCSH:Telecommunication
FREE:Computer Communication Networks
FREE:Microwaves, RF Engineering and Optical Communications
分 類 LCC:TK5105.5-5105.9
DC23:004.6
書誌ID EB00001980
ISBN 9789819901579

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