OPAC

Fundamentals of ultra-thin-body MOSFETs and FinFETs / Jerry G. Fossum, University of Florida, Gainesville, Vishal P. Trivedi, Freescale Semiconductor, Arizona

データ種別	図書
出版者	Cambridge ; New York : Cambridge University Press
出版年	2013
本文言語	英語
大きさ	xvi, 210 p : illustrations ; 26 cm
著者標目	*Fossum, Jerry G., 1943-

巻　次	配架場所	請求記号	登録番号	コメント	刷　年	状　態	利用注記	ISBN	予約	請求メモ
hbk.	射水-1階-洋書	549.8\|\|F41	101740009						予約		予約

内容注記	Machine generated contents note: Preface; List of physical constants; List of symbols; 1. Introduction; 2. Unique features of UTB MOSFETs; 3. Planar fully depleted SOI MOSFETs; 4. FinFETs; Appendix: UFDG; References; Index
一般注記	Summary: "Understand the theory, design, and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * describes FD/SOI MOSFETs and 3-D FinFETs in detail * covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM"-- Provided by publisher Includes bibliographical references (pages 200-207) and index
件　名	LCSH:Metal oxide semiconductor field-effect transistors LCSH:Integrated circuits -- Very large scale integration 全ての件名で検索 FREE:TECHNOLOGY & ENGINEERING / Electronics / Optoelectronics bisacsh
分　類	LCC:TK7871.99.M44 DC23:621.3815/284
書誌ID	B000109323
ISBN	9781107030411